ZUM MECHANISMUS VON REFORMIERREAKTIONEN EINIGER C₆-C₈-ALKANE UND CYCLOALKANE AN PT/AL₂O₃ = MECANISME DES REACTIONS DE REFORMING DE QUELQUES ALCANES C₆-C₈ ET CYCLANES SUR PT/AL₂O₃CHRISTOFFEL E.1978; CHEMIKER ZTG; DEU; DA. 1978; VOL. 102; NO 11; PP. 391-397; ABS. ENG; BIBL. 19 REF.Article

KINETICS OF SIMULTANEOUS ISOMERIZATION AND CRACKING OF N-HEXANE OVER PT/AL₂O₃SORJO I; CHRISTOFFEL E.1979; J. CATALYS.; USA; DA. 1979; VOL. 60; NO 1; PP. 133-139; BIBL. 24 REF.Article

DEHYDROCYCLIZATION OF N-HEXANE ON A BIFUNCTIONAL CATALYSTCHRISTOFFEL E; FETTING F; VIERRATH H et al.1975; J. CATALYST.; U.S.A.; DA. 1975; VOL. 40; NO 3; PP. 349-355; BIBL. 15 REF.Article

THERMODYNAMISCHE BERECHNUNGEN ZUR BILDUNG VON KOHLENWASSERSTOFFEN DURCH HYDRIERUNG VON KOHLENMONOXID. = CALCULS THERMODYNAMIQUES POUR LA FORMATION D'HYDROCARBURE PAR HYDROGENATION DE L'OXYDE DE CARBONECHRISTOFFEL E; SURJO I; BAERNS M et al.1978; CHEMIKER-ZTG; DTSCH.; DA. 1978; VOL. 102; NO 1; PP. 19-23; ABS. ANGL.; BIBL. 8 REF.Article

Charge transfer between paramagnetic photoquenchable anion antisites and electron-induced acceptors in GaAsCHRISTOFFEL, E; GOLTZENE, A; SCHWAB, C et al.Journal of applied physics. 1989, Vol 66, Num 11, pp 5648-5651, issn 0021-8979Article

Electron paramagnetic resonance studies of defects in CdIn₂S₄ single crystalsTAKIZAWA, T; CHRISTOFFEL, E; GOLTZENE, A et al.Japanese journal of applied physics. 1994, Vol 33, Num 4A, pp 1954-1958, issn 0021-4922, 1Article

Charge transfer as an alternative to metastability of defects in semi-insulating GaAs ?BENCHIGUER, T; CHRISTOFFEL, E; GOLTZENE, A et al.Japanese journal of applied physics. 1990, Vol 29, Num 9, pp L1569-L1571, issn 0021-4922, 2Article

Annealing behavior of strain-induced anion antisites in semi-insulating GaAsBENAKKI, S; CHRISTOFFEL, E; GOLTZENE, A et al.Journal of applied physics. 1989, Vol 66, Num 6, pp 2651-2655, issn 0021-8979Article

Donor-acceptor charge transfers in bulk semi-insulating GaAs as revealed by photo-EPRBENCHIGUER, T; CHRISTOFFEL, E; GOLTZENE, A et al.Applied surface science. 1991, Vol 50, Num 1-4, pp 277-280, issn 0169-4332, 4 p.Conference Paper

EPR evidence for As interstitial-related defects in semi-insulating GaAsCHRISTOFFEL, E; BENCHIGUER, T; GOLTZENE, A et al.Physical review. B, Condensed matter. 1990, Vol 42, Num 6, pp 3461-3468, issn 0163-1829, 8 p.Article

A two-dimensional modeling of the fine-grained polycrystalline silicon thin-film solar cellsCHRISTOFFEL, E; RUSU, M; ZERGA, A et al.Thin solid films. 2002, Vol 403-04, pp 258-262, issn 0040-6090Conference Paper

Influence of In-doping on dislocations in liquid encapsulated Czochralski (LEC) grown gallium arsenideWU, J; MO, P. G; WANG, G. Y et al.Journal of crystal growth. 1990, Vol 102, Num 4, pp 701-705, issn 0022-0248Article